Diffusion of iridium in silicon: Changeover from a foreign-atom-limited to a native-defect-controlled transport mode

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 11, 2001, Pages

  Obeidi, S ^a   Stolwijk, N A ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IRIDIUM; SILICON;

ARTICLE; DIFFUSION; DISSOCIATION; ELECTRON BEAM; NEUTRON ACTIVATION ANALYSIS; PHASE TRANSITION; SOLUBILITY; TRANSPORT KINETICS;

EID: 0035884502     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.113201     Document Type: Article

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13. For fixed (formula presented) (formula presented) settles according to (formula presented) based on mass action law and (formula presented). Conversely, fitting of (formula presented) also determines (formula presented).
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20. In fact, for (formula presented) the effective diffusivity for both (formula presented) and (formula presented) is given by (formula presented).
21. The I-controlled diffusivity prevails for (formula presented) and reads (formula presented) producing convex profiles when plotted as (formula presented) vs x.