High-performance RF mixer and operational amplifier BiCMOS circuits using parasitic vertical bipolar transistor in CMOS technology

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 2, 2005, Pages 392-402

  Nam, Ilku ^a   Lee, Kwyro ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

1 f noise; BiCMOS; Deep n well CMOS; Direct conversion receiver; Offset; Operational amplifier; Parasitic vertical bipolar transistor; RF mixer

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC BREAKDOWN; ELECTRIC IMPEDANCE; GAIN CONTROL; MOSFET DEVICES; OPERATIONAL AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; VLSI CIRCUITS;

BICMOS; DEEP N-WELL CMOS; DIRECT CONVERSION RECEIVER; OFFSET; PARASITIC VERTICAL BIPOLAR TRANSISTOR; RF MIXER 1/F NOISE;

CMOS INTEGRATED CIRCUITS;

EID: 13444291510     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.840982     Document Type: Article

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