Silicon self assembled quantum dot transistor operating at room temperature

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 115-117

  Choi, B H ^a   Hwang, S W ^a,c   Kim, I G ^b   Shin, H C ^b   Yong, Kim ^b   Kim, E K ^b  

^a Korea University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; LITHOGRAPHY; MICROELECTRONIC PROCESSING; OSCILLATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE; VAPOR DEPOSITION;

PLANAR NANO ARM DEPOSITION; SELF ASSEMBLED QUANTUM DOTS; SINGLE ELECTRON TRANSISTORS;

TRANSISTORS;

EID: 0032594702     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00165-3     Document Type: Article

References (3)

1. L. Guo, E. Leobandung, and S. Y. Chou, Sceince 275, 649 (1997).
2. L. Zhuang, L. Guo and S. Y. Chou, Appl. Phys. Lett. 72, 1205 (1998)
3. I. K. Kim, H. Kim, J. Lee, and H. C. Shin, Extended Abstracts of SSDM 98', 170 (1998).