Coulomb blockade in a silicon-on-sapphire nanowire

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 199-202

  Dovinos, D ^a   Hasko, D G ^a   Helin, Z ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF GLAMORGAN   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRON DEVICES; ELECTRON TUNNELING; INFRARED RADIATION; NANOSTRUCTURED MATERIALS; PHOTONS; SUBSTRATES; TRANSISTORS;

BIAS VOLTAGE; COULOMB BLOCKADE; COULOMB GAP VOLTAGE; PHOTON DETECTORS; SILICON ON SAPPHIRE NANOWIRE; SINGLE ELECTRON TRANSISTOR;

SILICON ON SAPPHIRE TECHNOLOGY;

EID: 0034207247     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00296-3     Document Type: Article

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