Lattice parameter determination of a composition controlled Si 1-xGex layer on a Si (001) substrate using convergent-beam electron diffraction

Journal of Electron Microscopy

Volumn 53, Issue 6, 2004, Pages 593-600

  Akaogi, Takayuki ^a,b   Tsuda, Kenji ^a   Terauchi, Masami ^a   Tanaka, Michiyoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b ASAHI KASEI CORPORATION   (Japan)

Author keywords

Convergent beam electron diffraction; Ge concentration; Lattice parameter determination; Lattice strain; Si1 xGex; Strain relaxation

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLOGRAPHY; METHODOLOGY; NANOTECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLOGRAPHY; GERMANIUM; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; SILICON;

CRYSTAL SYMMETRY; GERMANIUM; LATTICE CONSTANTS; SI-GE ALLOYS; STRAIN RELAXATION;

CONVERGENT BEAMS; CONVERGENT-BEAM ELECTRON DIFFRACTION; GE CONCENTRATIONS; LATTICE PARAMETER DETERMINATION; LATTICE STRAIN; LATTICE SYMMETRY; PARAMETER DETERMINATION; SI (001) SUBSTRATE; SI1-XGEX; THINNINGS;

ELECTRON DIFFRACTION;

EID: 13444269536     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/dfh091     Document Type: Article

References (30)

1. Abstreiter G, Brugger H, Wolf T, Jorke H, and Gerzong H J (1985) Strain-induced two-dimensional electron gas in selectively doped Si/ SixGe1-x supperlattice. Phys. Rev. Lett. 54: 2441-2444.
2. Nayak D K, Woo J C S, Park J S, Wang K L, and MacWilliams K P (1993) High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si. Appl. Phys. Lett. 62: 2853-2855.
3. x epilayers on silicon. Phys. Rev. B 45: 8565-8571.
4. 1-x structures grown by molecular-beam epitaxy. J. Appl. Phys. Lett. 59: 1611-1613.
5. 1-x layers with low threading dislocation densities grown on Si substrates. J. Appl. Phys. Lett. 59: 811-813.
6. Fatemi M and Stahlbush R E (1991) X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates. J. Appl. Phys. Lett. 58: 825-827.
7. x alloys. Phys. Rev. B 39: 10056-10062.
8. x Epitaxial layers grown by atmospheric pressure chemical vapor deposition. Solid State Commun. 88: 613-617.
9. 1-x layers. J. Appl. Phys. 75: 8098-8108.
10. Jones P M, Rackham G M, and Steed J W (1977) Higher order Laue zone effects in electron diffraction and their use in lattice parameter determination. Proc. R. Soc. Lond., A 354: 197-222.
11. Tanaka M and Terauchi M (1985) Convergent-Beam Electron Diffraction I. (JEOL-Maruzen, Tokyo.)
12. Cherns D, Eaglesham D J, and Kiely C J (1986) Convergent beam diffraction studies of metal-semiconductor interfaces In: Proc. XIth Int. Cong. on Electron Microscopy, Kyoto: 207-208.
13. Cherns D, Kiely C J, and Preston A R (1988) Electron diffraction studies of strain in epitaxial bicrystals and multilayers. Ultramicroscopy 24: 355-370.
14. 7-δ from nanometer-sized region. Ultramicroscopy 41: 211-223.
15. Weber L Z, Kaneyama T, Terauchi M, and Tanaka M (1993) Application of convergent-beam illumination methods to the study of lattice distortion across the interface. J. Crystal Growth 132: 103-114.
16. Zuo J M, Kim M, and Holmestad R (1998) A new approach to lattice parameter measurements using dynamic electron diffraction and pattern matching. J. Electron Microscopy 47: 121-127.
17. Kaiser U, Saitoh K, Tsuda K, and Tanaka M (1999) Application of the CBED method for the determination of lattice parameters of cubic SiC films on 6H SiC substrates. J. Electron Microscopy 48: 221-223.
18. Krämer S, Mayer J, Witt C, Weickenmeier A, and Ruhle M (2000) Analysis of local strain in aluminum interconnects by energy filtered CBED. Ultramicroscopy 81: 245-262.
19. x)/Si heterostructures by Rutherfords backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry. Microsc. Microanal. Microstruct. 3: 363-384.
20. Balboni R, Frabboni S, and Armigliato A (1998) Determination of bulk mismatch values in transmission electron microscopy cross-sections of heterostructures by convergent-beam electron diffraction. Phil. Mag. A 77: 67-83.
21. (x)/Si heterostructures by convergent beam electron diffraction. Phys. Rev. B 60: 13750-13761.
22. Akaogi T, Tsuda K, Terauchi M, and Tanaka M (2004) Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED. J. Electron Microscopy 53: 11-19.
23. Tsuda K and Tanaka M (1999) Refinement of crystal structural parameters using two-dimensional energy-filtered CBED patterns. Acta Cryst. A 55: 939-954.
24. Lin Y P, Bird D M, and Vincent R (1989) Errors and correction term for HOLZ line simulation. Ultramicroscopy 27: 233-240.
25. Tanaka M, Terauchi M, and Kaneyama T (1988) Convergent-Beam Electron Diffraction II (JEOL-Maruzen, Tokyo.)
26. Ibach H (1969) Thermal expansion of Silicon and Zinc Oxide(I) Phys. Stat. Sol. B 31: 625-634.
27. Brantley W A (1973) Calculated elastic constants for stress problems associated with semiconductor devices. J. Appl. Phys. 44: 534-535.
28. 1-x/Si strained-layer superlattices. Phil. Mag. A 70: 701091-1105.
29. Krämer S and Mayer J (1999) Using the Hough transform for HOLZ line identification in convergent beam electron diffraction. J. Microscopy 194: 2-11.
30. Armigliato A, Balboni R, Carnevale G P, Pavia G, Piccolo D, Frabboni S, Benedetti A, and Cullis A G (2003) Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices. Appl. Phys. Lett. 82: 2172-2174.