Field emission from hafnium oxynitride films prepared by ion beam-assisted deposition

Applied Surface Science

Volumn 242, Issue 3-4, 2005, Pages 407-411

  Wang, Yongjin ^a   Zhang, Jihua ^a   Zhang, Fumin ^a   Zhang, Feng ^a   Zou, Shichang ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Field emission; HfN x O y thin film; Ion beam assisted deposition

Indexed keywords

ANNEALING; HYDROGEN; ION BEAM ASSISTED DEPOSITION; PLASMAS; SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD EMISSION; HAFNIUM OXYNITRIDE FILMS; ION BEAM CURRENT;

HAFNIUM COMPOUNDS;

EID: 13444269311     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.007     Document Type: Article

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