Impact of poly-gate depletion on MOS RF linearity

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 330-332

  Choi, Chang Hoon ^a   Yu, Zhiping ^b   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

Distortion; Gate capacitance; Linearity; MOSFET; Polydepletion; RF; Thin oxide

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); POLYSILICON;

GATE CAPACITANCE; LINEARITY; POLY-GATE DEPLETION; THIN OXIDE;

MOSFET DEVICES;

EID: 0042173094     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812549     Document Type: Article

References (9)

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