120V Multi RESURF Junction Barrier Schottky Rectifier (MR-JBS)

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 97-100

  Kunori, Shinji ^a   Kitada, M ^a   Shimizu, T ^a   Oshima, K ^a   Sugai, A ^a  

^a Shindengen Electric Manufacturing Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; EPITAXIAL GROWTH; SEMICONDUCTOR JUNCTIONS; SINGLE CRYSTALS;

SCHOTTKY JUNCTIONS;

SCHOTTKY BARRIER DIODES;

EID: 0036051761     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Controlling the characteristics of the MPS recti fier by variation of area of schottky region
2. A low forward drop high voltage trench MOS barrier schottky rectifier with linearly graded doping profile
3. 100 V trench MOS barrier schottky rectifier using thick oxide layer(To-TMBS)
4. Low forward drop JBS rectifiers fabricated usingsubmicron technology
5. Design consideration of 1000 V mergedPiN Schottk'y diode usingsuperjunction sustaining layer
6. Fabrication of high aspect ratio doping region by using trench filling of epitaxial Si growth