Widely tunable light-emitting diodes by Stark effect in forward bias

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1582-1584

  Le Thomas, N ^a   Pelekanos, N T ^b   Hatzopoulos, Z ^b   Aperathitis, E ^b   Hamelin, R ^c  

^a CEA GRENOBLE   (France)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BAND GAP ENGINEERING; CARRIER DISTRIBUTIONS; FORWARD BIAS; SPACE CHARGES; SPECTRAL REGION; STARK SHIFT; WIDELY TUNABLE;

ELECTRIC FIELDS; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 79956038451     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503403     Document Type: Article

References (6)

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