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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 12 B, 2003, Pages

Effect of B2O3 Vapor Doping on the Lattice Parameter and Electrical Properties in BaTiO3 Ceramics

(4) Qi, Jian Quan a Wang, Yu a Chen, Wan Ping a Chan, Helen Lai Wah a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

Boron; Interstitial; Positive temperature coefficient resistance; Vapor doping

Indexed keywords

BARIUM TITANATE; CAPACITORS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; LATTICE CONSTANTS; PIEZOELECTRIC DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SINTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BATIO3; INTERSTITIAL STATES; POSITIVE TEMPERATURE COEFFICIENT RESISTANCE; VAPOR DOPING;

CERAMIC MATERIALS;

EID: 1342284861 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l1516 Document Type: Article

Times cited : (5)

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