Enhancement of positive temperature coefficient resistance effect of BaTiO3-based semiconducting ceramics caused by B2O3 vapor dopants

Solid State Communications

Volumn 120, Issue 12, 2001, Pages 505-508

  Jianquan, Qi ^a   Qing, Zhu ^a   Yongli, Wang ^a   Yajing, Wu ^a   Longtu, Li ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

B2O3; BaTiO3; Positive temperature coefficient resistivity; Vapor dopant

Indexed keywords

CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON TRAPS; GRAIN BOUNDARIES; MICROSTRUCTURE; POSITIVE TEMPERATURE COEFFICIENT; POTENTIAL ENERGY; SEMICONDUCTOR MATERIALS; SINTERING; THERMAL EFFECTS;

SEMICONDUCTING CERAMICS; VAPOR DOPANTS;

CERAMIC MATERIALS;

EID: 0035976502     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00440-9     Document Type: Article

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8. Relations between the concentrations of imperfections in crystalline solids
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