Improvement of the PTCR effect in Ba1-xSrxTiO3 semiconducting ceramics by doping of Bi2O3 vapor during sintering

Journal of the American Ceramic Society

Volumn 81, Issue 2, 1998, Pages 437-438

  Qi, Jianquan ^a   Chen, Wanping ^a   Wu, Yajing ^a   Li, Longtu ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; BISMUTH COMPOUNDS; ELECTRIC RESISTANCE; POSISTORS; SEMICONDUCTOR DOPING; SINTERING;

BISMUTH OXIDE; POSITIVE TEMPERATURE COEFFICIENT OF RESISTANCE (PTRC); RESISTANCE JUMP;

CERAMIC MATERIALS;

EID: 0032003432     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1998.tb02355.x     Document Type: Article

References (10)

1. W. Heywang and H. Brauer, "Formation of Barrier Regions in Cold Conducting Barium Titanate (in Ger.)," Solid State Electron., 8 [2] 129-35 (1965).
2. 2 Additives," J. Am. Ceram. Soc., 55, 108 (1972).
3. 3," J. Mater. Sci., 32, 713-17 (1997).
4. 3 Containing Excess PbO," J. Am. Ceram. Soc., 78, 1071-75 (1995).
5. A. I. Kingon and J. B. Clark, "Sintering of PZT Ceramics: I, Atmosphere Control." J. Am. Ceram. Soc., 66, 253-56 (1983).
6. 3," J. Am. Ceram. Soc., 67, 285-89 (1984).
7. W. L. Warren, K. Vanheusden, D. Dimos, G. E. Pike, and B. Tuttle, "Oxygen Vacancy Motion in Perovskite Oxides," J. Am. Ceram. Soc., 79, 536-38 (1996).
8. J. Daniels, K. H. Hardtl, and R. Wernicke, "The PTC Effect of Barium Titanate," Philips Tech. Rev., 38 [3] 73-82 (1978/79).
9. G. H. Jonker, "Some Aspects of Semiconducting Barium Titanate," Solid State Electron., 7 [12] 895-903 (1964).
10. W. Heywang, "Resistivity Anomaly in Doped Barium Titanate," J. Am. Ceram. Soc., 47 [10] 484-90 (1964).