Wedge-shaped and flat cross-sections for quantitative characterization of the electrostatic potential distributions across p-n junctions by electron holography

Surface and Interface Analysis

Volumn 37, Issue 2, 2005, Pages 221-224

  Wang, Zhouguang ^a   Kato, Takeharu ^a   Hirayama, Tsukasa ^a   Kato, Naoko ^b   Sasaki, Katsuhiro ^c   Saka, Hiroyasu ^c  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b Struct Anal Intl Test/ESCL   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Electron holography; Focused ion beam; Quantitative p n junction potential; Wedge flat cross section

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; ELECTRON HOLOGRAPHY; ION BEAMS; SEMICONDUCTOR DEVICES; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY; FOCUSED ION BEAMS (FIB); QUANTITATIVE P-N JUNCTION POTENTIAL; WEDGE/FLAT CROSS-SECTION;

HETEROJUNCTIONS;

EID: 13244290024     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1969     Document Type: Conference Paper

References (9)

1. Rau WD, Schwander P, Baumann FH, Hoppner W, Ourmazd A. Phys. Rev. Lett. 1999; 82: 2614.
2. Wang Z, Sasaki K, Kato N, Urata K, Hirayama T, Saka H. J. Electron Microsc. 2001; 50:479.
3. Wang Z, Kato T, Shibata N, Hirayama T, Kato N, Sasaki K, Saka H. Appl. Phys. Lett. 2002; 81: 478.
4. Wang Z, Hirayama T, Sasaki T, Saka H, Kato N. Appl. Phys. Lett. 2002; 80:246.
5. Gribelyuk MA, McCartney MR, Li J, Murthy CS, Ronsheim P, Doris B, McMurray JS, Hegde S, Smith DJ. Phys. Rev. Lett. 2002; 89:025502.
6. Thesen AE, Frost BG, Joy DC. Ultramicroscopy 2003; 94: 277.
7. Young R, Kirk E, Williams D, Ahmed H. Mater. Res. Soc. Symp. Proc. 1990; 199: 205.
8. Wang Z, Kato T, Hirayama T, Sasaki K, Saka H, Kato N. J. Vac. Sci. Tecnol. B 2003; 21: 2155.
9. Gajdardziska-Josifovska M, Carim A. In Introduction to Electron Holography, Volkl E, Allard LF, Joy DC (eds). Kluwer/Plenum Publishers: New York, 1999; 267.