Ge p-MOSFETs compatible with Si CMOS-technology

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 300-303

  Reinking, D ^a   Kammler, M ^a   Hoffmann, N ^a   Horn Von Hoegen, M ^a   Hofmann, K R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; GATES (TRANSISTOR); GERMANIUM; MOS DEVICES; SILICON; SUBSTRATES; TRANSCONDUCTANCE;

CAP LAYER THICKNESS; CHANNEL LAYERS; CMOS-TECHNOLOGY; GATE VOLTAGES; INTRINSIC SATURATION; LOW TEMPERATURES; MOBILITY VALUE; SILICON SUBSTRATES;

MOSFET DEVICES;

EID: 84907886217     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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8. D. Reinking, M. Kammler, N. Hoffann, M. Hor-von Hoegen, and K.R. Hofann, "Fabrication of high-mobilit p-channel Ge MOSFETs on Si substrates", lEE Electronics Lett., 1999, 35, pp. 503-504.
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