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Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 777-780

Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities

(2) Anguita, J V a Suva, S R P a

a UNIVERSITY OF SURREY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; DEFECTS; ENERGY GAP; HYDROGENATION; NITROGEN COMPOUNDS; PARAMAGNETISM; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; ULTRAVIOLET SPECTROSCOPY;

HYDROGENATED AMORPHOUS CARBON FILMS; LOW DEFECT DENSITIES;

AMORPHOUS FILMS;

EID: 12944267050 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(99)00324-6 Document Type: Article

Times cited : (3)

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