Deposition of optimal a-Si:H and a-SiGe:H by HWCVD using the same filament temperature and substrate temperature

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 407-412

  Mahan, A H ^a   Xu, Y ^a   Gedvilas, L M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEGRADATION; LOW TEMPERATURE EFFECTS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; X RAY DIFFRACTION;

BANDGAP; HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); MATERIAL QUALITY; SINGLE JUNCTION DEVICES;

AMORPHOUS SILICON;

EID: 12744259338     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a9.48     Document Type: Conference Paper

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