SCOPUS 정보 검색 플랫폼

Volumn 152, Issue 1, 2005, Pages

Characterization of three-dimensional capacitor prepared by oxide recess in shallow trench isolation

(7) Suh, Dong Hack a Cho, Jeong Ho b Jeong, Yong Cbeol b Chi, Seo Young b Park, Jung Goo b Kim, Youn Jang b Lee, Junghwan b

a Hanyang University (South Korea)

b MagnaChip Semiconductor Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; LOGIC CIRCUITS; SEMICONDUCTOR JUNCTIONS; SILICA; THREE DIMENSIONAL;

SHALLOW TRENCH ISOLATION (STI); SYSTEM-ON-CHIP (SOC); THREE DIMENSIONAL (3D) CAPACITORS; WEIBULL METHOD;

CAPACITORS;

EID: 12744255033 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1829411 Document Type: Article

Times cited : (1)

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