Fabrication of strained silicon on insulator (SSOI) by direct wafer bonding using thin relaxed SiGe film as virtual substrate

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 77-82

  Lee, J J ^a   Maa, S S ^a   Tweet, D J ^a   Hsu, S T ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HOLE MOBILITY; SILICON COMPOUNDS; THIN FILMS; TRANSCONDUCTANCE; X RAY DIFFRACTION ANALYSIS;

BURIED OXIDE (BOX); HYDROGEN IMPLEMENTATION; LATTICE RELAXATION; WAFER BONDING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 12744251594     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b2.2     Document Type: Conference Paper

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