Adsorption, Desorption, and Reaction of a Gallium Nitride Precursor, (H2GaNHNMe2)2, on HfO2

Chemistry of Materials

Volumn 16, Issue 4, 2004, Pages 629-638

  Luo, Bing ^a   Lee, Sung Yong ^a   White, J M ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; DIMERS; GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; MONOMERS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; TEMPERATURE PROGRAMMED DESORPTION; X RAY DIFFRACTION;

PRECURSORS;

ADSORPTION;

DIMER; GALLIUM; GALLIUM NITRIDE; HAFNIUM; HYDROGEN; MONOMER; NITROGEN; OXYGEN; UNCLASSIFIED DRUG;

ADSORPTION; ARTICLE; CHEMICAL REACTION; DESORPTION; DISSOCIATION; FILM; LOW TEMPERATURE; MOLECULAR MODEL; PHASE TRANSITION; PRECURSOR; REACTION ANALYSIS; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPY; X RAY DIFFRACTION;

EID: 1242320221     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm034583y     Document Type: Article

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