Systematic analysis of RF distortion in SiGe HBT's

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 147-150

  Niu, G ^a   Liang, Q ^a   Cressler, J D ^a   Webster, C S ^a   Harame, D L ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC NETWORK ANALYSIS; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT LAYOUT; INTERMODULATION; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL DISTORTION;

KIRK EFFECT; LOW NOISE AMPLIFIER; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; VOLTERRA SERIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034875231     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)