Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 407-410

  Liang, Qingqing ^a   Niu, Guofu ^a   Cressler, John D ^a   Taylor, Stewart ^a   Harame, David L ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW-NOISE AMPLIFIERS (LNA);

AMPLIFIERS (ELECTRONIC);

EID: 0036309636     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Si/SiGe epitaxial-base transistors-Part I: Materials, physics, and circuits
2. A 1.5V, 1.5 GHz CMOS low noise amplifier
3. RF linearitynn characteristics of SiGe HBTs
4. Intermodulation in heterojunction bipolar transistors