SCOPUS 정보 검색 플랫폼

Journal of Alloys and Compounds

Volumn 300, Issue , 2000, Pages 207-213

Luminescence characteristics of Er-doped GaN semiconductor thin films

(7) Zavada, J M a Thaik, Myo b Hommerich U b MacKenzie, J D c Abernathy, C R c Pearton, S J c Wilson, R G d

a US Army European Research Office (United Kingdom)

b HAMPTON UNIVERSITY (United States)

c UNIVERSITY OF FLORIDA (United States)

d NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ERBIUM; ION IMPLANTATION; IONS; LIGHT EMISSION; LUMINESCENCE OF SOLIDS; OPTICAL PUMPING; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE; IN SITU DOPING; INFRARED PHOTOLUMINESCENCE SPECTRA; OPTICAL ACTIVATION; THERMAL QUENCHING;

THIN FILMS;

EID: 0033885231 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-8388(99)00724-0 Document Type: Article

Times cited : (37)

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