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Volumn 4986, Issue , 2003, Pages 613-620

The effect of pressure and temperature on AlGaInP and AlGaAs laser diodes

Author keywords

Hydrostatic pressure effects; Temperature effects; Threshold currents; Tunable laser diodes

Indexed keywords

CLADDING (COATING); DIFFUSION IN SOLIDS; FERMI LEVEL; HIGH PRESSURE EFFECTS; HYDROSTATIC PRESSURE; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE CONTROL;

EID: 0242524362     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.498045     Document Type: Conference Paper
Times cited : (10)

References (6)
  • 3
    • 0013389963 scopus 로고    scopus 로고
    • High Pressure in Semiconductor Physics II
    • eds. T. Suski and W. Paul, Academic Press
    • A.R. Adams, M. Silver and J.Allam, "High Pressure in Semiconductor Physics II", Semiconductors and Semimetals 55, eds. T. Suski and W. Paul, (Academic Press, 1998) pp. 301-352
    • (1998) Semiconductors and Semimetals , vol.55 , pp. 301-352
    • Adams, A.R.1    Silver, M.2    Allam, J.3
  • 4
    • 0033153958 scopus 로고    scopus 로고
    • The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers
    • B. Gonul, "The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers", Semiconductor Science and Technology 14, 648-656, 1999
    • (1999) Semiconductor Science and Technology , vol.14 , pp. 648-656
    • Gonul, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.