Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2473-2476

  Zheng, Z W ^a,b   Shen, B ^a,b   Gui, Y S ^b   Qiu, Z J ^b   Jiang, C P ^b   Tang, N ^a   Liu, J ^a   Chen, D J ^a   Zhou, H M ^a   Zhang, R ^a   Shi, Y ^a   Zheng, Y D ^a   Quo, S L ^b   Chu, J H ^b   Hoshino, K ^c   Arakawa, Y ^c  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC FIELD EFFECTS; ELECTRON GAS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; POLARIZATION; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

MAGNETOTRANSPORT PROPERTIES; SPIN SPLITTING;

GALLIUM NITRIDE;

EID: 12144287863     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1642732     Document Type: Article

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