Abnormal Oxidation of NiSi Formed on Arsenic-Doped Substrate

Electrochemical and Solid-State Letters

Volumn 7, Issue 4, 2004, Pages

  Yun, Jang Gn ^a   Ji, Hee Hwan ^a   Oh, Soon Young ^a   Bae, Mi Suk ^a   Lee, Hun Jin ^a   Huang, Bin Feng ^a   Kim, Yong Goo ^a   Wang, Jin Suk ^a   Sung, Nak Gyun ^b   Hu, Sang Bum ^b   Lee, Jeong Gun ^b   Park, Seong Hyung ^b   Lee, Hee Seung ^b   Ho, Won Joon ^b   Kim, Dae Byung ^b   Lee, Hi Deok ^a  

^a Chungnam National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; MOSFET DEVICES; OXIDATION; SEMICONDUCTOR DOPING; SPECTROMETRY; SUBLIMATION; SUBSTRATES; THERMODYNAMIC STABILITY;

CONTACT RESISTANCE; THERMAL ENERGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 12144286551     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1649831     Document Type: Article

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