Silicide technology in deep submicron regime

Materials Research Society Symposium - Proceedings

Volumn 514, Issue , 1998, Pages 171-178

  Suguro, K ^a   Iinuma, T ^a   Ohuchi, K ^a   Miyashita, K ^a   Akutsu, H ^a   Yoshimura, H ^a   Akasaka, Y ^a   Nakajima, K ^a   Miyano, K ^a   Toyoshima, Y ^a  

^a Microelectronics Engineering Lab   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GRAIN BOUNDARIES; OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

COBALT TITANIUM ALLOYS; PARASITIC RESISTANCE;

COBALT ALLOYS;

EID: 0032287819     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-514-171     Document Type: Conference Paper

References (11)