Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors

Electronics Letters

Volumn 34, Issue 20, 1998, Pages 1977-1979

  Masson, P ^a,b   Ghibaudo, G ^a   Autran, J L ^b   Morfouli, P ^a   Brini, J ^a  

^a Grenoble INP Phelma   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; SCATTERING; THRESHOLD VOLTAGE;

LOW FREQUENCY NOISE; QUADRATIC MOBILITY DEGRADATION FACTOR;

MOSFET DEVICES;

EID: 0032181549     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981122     Document Type: Article

References (6)

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2. GHIBAUDO, G., ROUX, O., NGUYEN-DUC, CH., BALESTRA, F., and BRINI, J.: 'Improved analysis of low frequency noise in field-effect MOS transistors', Phys. Stat. Sol. A, 1991, 129, pp. 571-582
3. SUN, S.C., and PLUMMER, J.D.: 'Electron mobility in inversion and accumulation layer on thermally oxidised silicon surfaces', IEEE Trans., 1980, ED-27, pp. 1497-1508
4. HUNG, K.K., KO, P.K., and HU, C.: 'A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors', IEEE Trans., 1990, ED-37, (3), pp. 654-665
5. VAN DER ZIEL, A.: 'Noise in solide state devices and circuits' (Wiley, New York 1986)
6. McLARTY, P.K., CRISTOLOVEANU, S., FAYNOT, O., MISTRA, V., HAUSER, J.R., and WORTMAN, J.J.: 'A simple parameter extraction method for ultra-thin oxide MOSFET's', Solid-State Electron., 1995, 38, pp. 1175-1177