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Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1334-1338

Effect of low-temperature annealing on the crystallinity of III-V-based diluted magnetic semiconductors

(4) Hashimoto, Y a Hayashi, T a Katsumoto, S a Iye, Y a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

CRYSTALLINE MATERIALS; FERROMAGNETISM; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

CURIE TEMPERATURE;

MAGNETIC SEMICONDUCTORS;

EID: 0036530892 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02063-2 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.