Generation-recombination effects in high temperature HgCdTe heterostructure photodiodes

Opto-Electronics Review

Volumn 12, Issue 4, 2004, Pages 417-428

  Jozwikowska A ^a   Jozwikowski K ^b   Rutkowski, J ^b   Orman, Z ^c   Rogalski, A ^b  

^a WARSAW UNIVERSITY OF LIFE SCIENCES   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^c VIGO SYSTEM S A   (Poland)

Author keywords

Generation recombination effects; HgCdTe photodiodes; Poole Frankel effect

Indexed keywords

BAND STRUCTURE; DATA ACQUISITION; DISLOCATIONS (CRYSTALS); ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; PARTIAL DIFFERENTIAL EQUATIONS; PHONONS; PHOTODIODES;

GENERATION-RECOMBINATION EFFECTS; HGCDTE PHOTODIODES; POOLE-FRANKEL EFFECT; R0A PRODUCT;

MERCURY COMPOUNDS;

EID: 11844264851     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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