Determination of Shockley-Read trap parameters in n- and p-type epitaxial CdxHg1-xTe

Semiconductor Science and Technology

Volumn 11, Issue 8, 1996, Pages 1163-1167

  Barton, S C ^a   Capper, P ^a   Jones, C L ^a   Metcalfe, N ^a   Dutton, D ^a,b  

^a GEC Marconi Infrared Ltd   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CAPTURE RATES; IMPURITY DOPED SAMPLES; SHOCKLEY READ TRAPS; TRAP DENSITY; TRAPPING EFFECTS; VACANCY CONTROLLED DOPED SAMPLES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030205431     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/8/008     Document Type: Article

References (9)

1. Nemirovsky Y, Fastow R, Meyassed M and Unikovsky A 1991 J. Vac. Sci. Technol. B 9 1829
2. Tunnicliffe J, Irvine S J C, Dosser O D and Mullin J B 1984 J. Crystal Growth 68 245
3. Whiffin P A C, Easton B C, Capper P and Maxey C D 1986 J. Crystal Growth 79 935
4. Maxey C D, Gale I G, Clegg J B, Whiffin P A C 1993 Semicond. Sci. Technol. 8 S183
5. Capper P 1994 Properties of Narrow-gap Cadmium-based Compounds (EMIS Data Review Series No 10) (London: IEE/INSPEC) p 5
6. Van der Pauw L J 1958 Philips Res. Rep. 13 1
7. Barton S, Capper P, McAllister A, Jones C L and Metcalfe N 1993 Semicond. Sci. Technol. 8 S81
8. Shockley W and Read W T 1952 Phys. Rev. 87 835
9. Polla D L, Aggarwal R L, Nelson D A, Shanley J F and Reine M B 1983 Appl. Phys. Lett. 43 941