Influence of dislocations on generation-recombination process in narrow-bandgap semiconductors

Electron Technology (Warsaw)

Volumn 33, Issue 4, 2000, Pages 518-528

  Jozwikowski, K ^a   Niedziela, T ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DISLOCATIONS (CRYSTALS); ITERATIVE METHODS; NUMERICAL METHODS; PHOTOELECTRICITY; SURFACES; TRANSPORT PROPERTIES;

CHARGE CARRIER TRANSPORT EQUATION; GENERATION RECOMBINATION PROCESS; NARROW BANDGAP SEMICONDUCTOR; SURFACE RECOMBINATION;

ENERGY GAP;

EID: 0034461536     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (27)