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Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 90-94

Start of misfit relaxation in GaAs-ZnSe heterostructures

(10) Ress H R a Spahn, W a Ebel, R a Nurnberger J a Keller, M a Schafer H a Korn, M a Ehinger, M a Faschinger, W a Landwehr, G a

a UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

Critical thickness; High resolution X ray diffraction; Relaxation; ZnSe

Indexed keywords

EID: 11544313416 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)80300-X Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.