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Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 29-32

Characterization of structural defects in MBE grown ZnSe

(5) Worschech, L a Ossau, W a Fischer, C a Schafer H a Landwehr, G a

a UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

Molecular beam epitaxy; Photoluminescence; Transmission electron microscopy

Indexed keywords

ANISOTROPY; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ENERGY GAP; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOLUMINESCENCE SPECTROSCOPY; ZEEMAN EFFECTS; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030709656 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01827-2 Document Type: Article

Times cited : (6)

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