ZnSe heteroepitaxy on GaAs(0 0 1) and GaAs(1 1 0)

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 41-45

  Miwa, S ^a,c   Kuo, L H ^a,c   Kimura, K ^a,d,e   Ohtake, A ^a   Yasuda, T ^a   Jin, C G ^a   Yao, T ^a,b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c SONY CORPORATION   (Japan)

^d Super Epitaxial Products Inc   (United States)

^e Basic High Technology Lab   (Japan)

Author keywords

Charge balance; Defect density; GaAs; Heteroepitaxy; ZnSe

Indexed keywords

EID: 11544297915     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80290-x     Document Type: Article

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