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Journal of Magnetism and Magnetic Materials

Volumn 286, Issue SPEC. ISS., 2005, Pages 158-161

Enhancement of tunneling magnetoresistance by inserting an amorphous nonmagnetic FeZr layer in magnetic tunnel junctions

(5) Jun, Kyung In a Lee, J H a,b Shin, K H a Rhie, K b Lee, B C c

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

c Inha University (South Korea)

Author keywords

Amorphous; FeZr; MTJ; TMR

Indexed keywords

FEZR; MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNELING MAGNETORESISTANCE (TMR);

AMORPHOUS FILMS; ANNEALING; ELECTRIC RESISTANCE; ELECTRON TUNNELING; MAGNETIC DEVICES; MAGNETIC FILMS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; OXIDATION; SENSORS; TUNNEL JUNCTIONS;

MAGNETORESISTANCE;

EID: 11444264806 PISSN: 03048853 EISSN: None Source Type: Journal
DOI: 10.1016/j.jmmm.2004.09.022 Document Type: Conference Paper

Times cited : (11)

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