Analytical turn-off current model for type of conductivity modulation power MOSFETs with extracted excess carrier

Solid-State Electronics

Volumn 44, Issue 1, 2000, Pages 1-9

  Li, Zhaoji ^a   Zhang, Ming ^a   Yang, Jian ^a   Fang, Jian ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; TRANSIENTS;

NON-QUASI-STATIC STATE (NQS) APPROXIMATION; TRANSIENT TURN-OFF CURRENT ANALYSIS;

MOSFET DEVICES;

EID: 0033640365     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00218-X     Document Type: Article

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