UV photoreflectance for wide band gap nitride characterization

Thin Solid Films

Volumn 450, Issue 1, 2004, Pages 75-78

  Bru Chevallier, C ^a   Fanget, S ^a   Guillot, G ^a   Ruffenach, S ^b   Briot, O ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

GaN AlGaN; Photoreflectance; Piezoelectric fields

Indexed keywords

COMPUTER SIMULATION; ENERGY GAP; LIGHT REFLECTION; NITRIDES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

BUFFER LAYERS; PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 1142303866     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.146     Document Type: Conference Paper

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