Piezoelectric field influence on GaN/AlxGa1-xN quantum well optical properties

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 351-354

  Fanget, S ^a   Bru Chevallier, C ^a   Briot, O ^b   Ruffenach, S ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; POLARIZATION; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS;

BUILT-IN ELECTRIC FIELDS; ELECTRIC FIELD STRENGTH; FRANZ-KELDYSH OSCILLATIONS; LUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; PIEZO-ELECTRIC FIELDS; QUANTUM-CONFINED STARK EFFECT; SPONTANEOUS POLARIZATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1142302444     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390061     Document Type: Conference Paper

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