Degradation of passivated and non-passivated N-channel low-temperature polycrystalline silicon TFTs prepared by excimer laser processing

Solid-State Electronics

Volumn 46, Issue 8, 2002, Pages 1079-1083

  Teng, T H ^a   Huang, C Y ^a   Chang, T K ^a   Lin, C W ^a   Cheng, L J ^a   Lu, Y L ^a   Cheng, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bias stress; Excimer laser; Instability; Plasma treatment; Poly Si TFT

Indexed keywords

DEGRADATION; ELECTRON TUNNELING; EXCIMER LASERS; IMPACT IONIZATION; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SILICON; STRESS ANALYSIS;

BIAS STRESS; PLASMA TREATMENTS;

THIN FILM TRANSISTORS;

EID: 0036680227     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00045-X     Document Type: Article

References (5)

1. 2 plasma passivation process for poly-Si thin-film transistors (TFT's)
2. 3 plasma passivation on n-channel polycrystalline silicon thin-film transistors
3. Negative gate bias instability in polycrystalline silicon TFT's
4. Control of performance of polysilicon thin-film transistor by high-gate voltage stress
5. Mechanism of device degradation in n- and p-channel polysilicon TFT's by electrical stressing