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Volumn 61, Issue 4, 2000, Pages R2397-R2400

Monte Carlo study of vacancy-mediated impurity diffusion in silicon

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EID: 0006771004     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.R2397     Document Type: Article
Times cited : (18)

References (21)
  • 6
    • 85037897495 scopus 로고    scopus 로고
    • J. S. Nelson (private communication).
    • Nelson, J.1
  • 16
    • 0031355215 scopus 로고    scopus 로고
    • M. M. Bunea and S. T. Dunham, in Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, MRS Symposia Proceedings No. 469 (Materials Research Society, Pittsburgh, 1997), p. 353;
    • (1997) MRS Symposia Proceedings , pp. 353
    • Bunea, M.1    Dunham, S.2
  • 19
    • 0005591167 scopus 로고
    • also as an example for microscopic theories of atomic movements, see A. Allnat and A. B. Lidiard, Rep. Prog. Phys. 50, 373 (1987).
    • (1987) Rep. Prog. Phys. , vol.50 , pp. 373
    • Allnat, A.1    Lidiard, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.