In situ x-ray photoelectron spectroscopic and density-functional studies of Si atoms adsorbed on a C60 film

Journal of Chemical Physics

Volumn 121, Issue 22, 2004, Pages 11351-11357

  Onoe, Jun ^a,b   Nakao, Aiko ^c   Hara, Toshiki ^c,d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c RIKEN   (Japan)

^d SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; BINDING ENERGY; CARBON; CHARGE TRANSFER; CHEMICAL BONDS; COMPLEXATION; CRYSTALS; ELECTRON ENERGY LEVELS; IN SITU PROCESSING; ISOTOPES; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; ULTRAHIGH VACUUM; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DENSITY FUNCTIONAL THEORY (DFT); ELECTRON TRANSFER; SILICON SUBOXIDES; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY (UPS); VALENCE ELECTRONS;

SILICON;

EID: 11144326397     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814053     Document Type: Article

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