Thermal-dependent electronic structure at the interface of C60-adsorbed Si(111)-(7 × 7) surface

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 248-253

  Sakamoto, Kazuyuki ^a   Kondo, Daiyu ^a   Ushimi, Yoshimitsu ^a   Kimura, Akio ^b   Kakizaki, Akito ^c   Suto, Shozo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; BINDING ENERGY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; FULLERENES; MOLECULES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE; THERMAL EFFECTS;

SURFACE ELECTRONIC PHENOMENA; THERMAL DEPENDENT ELECTRONIC STRUCTURE;

INTERFACES (MATERIALS);

EID: 0033336570     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00577-4     Document Type: Article

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