Laser induced oxidation for growth of ultrathin gate oxide

Electronics Letters

Volumn 40, Issue 25, 2004, Pages 1606-1608

  Singh, R ^a   Paily, R ^a   DasGupta, A ^a   DasGupta, N ^a   Misra, P ^b   Kukreja, L M ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; LITHOGRAPHY; MOSFET DEVICES; OXIDATION; SILICA; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS;

OXIDE THICKNESS; RAPID THERMAL OXIDATION (RTO); SURFACE LAYERS; ULTRATHIN GATE OXIDES;

LASER PULSES;

EID: 11144324364     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046763     Document Type: Article

References (6)

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3. Boyd, I.W.: 'Laser-enhanced oxidation of silicon', Appl. Phys. Lett., 1983, 41, pp. 728-730
4. Orlowski, T.E., and Richter, H.: 'Ultrafast laser-induced oxidation of silicon: a new approach towards high-quality, low-temperature, patterned silicon dioxide formation', Appl. Phys. Lett., 1984, 45, pp. 241-243
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