Evidence of Mn occupation of Ga Site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFS

Electrochemical and Solid-State Letters

Volumn 7, Issue 12, 2004, Pages

  Baik, Jeong Min ^a   Kim, Sang Uk ^a   Koo, Yang Mo ^a   Kang, Tae Won ^b   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CONCENTRATION (PROCESS); ELECTROCHEMISTRY; FERROMAGNETIC MATERIALS; SEMICONDUCTING MANGANESE COMPOUNDS; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS); HOLE CONCENTRATION; TRANSMISSION LINE METHOD;

MAGNETIC SEMICONDUCTORS;

EID: 11144311042     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1813365     Document Type: Article

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