Dependence of time-dependent dielectric breakdown lifetime on the structure in Cu metallization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7405-7410

  Noguchi, Junji ^a   Saito, Tatsuyuki ^a   Maruyama, Hiroyuki ^a   Kubo, Maki ^a   Ohashi, Naofumi ^b   Takeda, Ken Ichi ^a  

^a HITACHI LTD   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Copper metallization; Dielectric breakdown; Low k dielectric; Surface treatment; TDDB lifetime

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; DIFFUSION; IONS; LEAKAGE CURRENTS; METALLIZING;

COPPER METALLIZATION; DIELECTRIC BREAKDOWN; LOW-K DIELECTRIC; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) LIFETIME;

COPPER;

EID: 11144238240     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7405     Document Type: Article

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13. MEDICI is provided by Avant!.