Effects of O2- And N2-plasma treatments on copper surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7415-7418

  Chiang, Chiu Chih ^a   Chen, Mao Chieh ^a   Li, Lain Jong ^b   Wu, Zhen Cheng ^b   Jang, Syun Ming ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Copper surface; Cu N; Cu O; Dielectric breakdown; Plasma treatment

Indexed keywords

CAPACITORS; CURRENT DENSITY; LEAKAGE CURRENTS; MIM DEVICES; NITROGEN; OXYGEN;

COPPER SURFACE; CU-N; CU-O; DIELECTRIC BREAKDOWN; PLASMA TREATMENT;

PLASMAS;

EID: 11144230022     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7415     Document Type: Article

References (16)

1. E. Apen, B. R. Rogers and J. A. Sellers: J. Vac. Sci. & Technol. A 16 (1998) 1227.
2. G. P. Beyer, M. Baklanov, T. Conard and K. Maex: Mater. Res. Soc. Symp. Proc. 612 (2000) D9.17.1.
3. J. Noguchi, N. Ohashi, T. Jimbo, H. Yamaguchi, K. I. Takeda and K. Hinode: IEEE Trans. Electron Devices 48 (2001) 1340.
4. C. C. Chiang, M. C. Chen, C. C. Ko, S. M. Jang, C. H. Yu and M. S. Liang: Jpn. J. Appl. Phys. 42 (2003) 5246.
5. D. Brassard and M. A. E. Khakani: J. Appl. Phys. 93 (2003) 4066.
6. R. G. Wilson, F. A. Stevie and C. W. Magee: Secondary Ion Mass Spectrometry-A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (John Wiley & Sons, New York, 1989) p. 4.2-1.
7. R. G. Wilson, F. A. Stevie and C. W. Magee: Secondary Ion Mass Spectrometry-A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (John Wiley & Sons, New York, 1989) p. 2.4-1.
8. C. C. Chiang, Z. C. Wu, W. H. Wu, M. C. Chen, C. C. Ko, H. P. Chen, S. M. Jang, C. H. Yu and M. S. Liang: Jpn. J. Appl. Phys. 42 (2003) 4489.
9. W. M. Huang, Z. J. Ma, M. Racanelli, D. Hughes, S. Ajuria, G. Huffman, T. P. Ong, P. K. Ko, C. Hu and B. Y. Hwang: IEEE IEDM Tech. Dig., 1993, p. 735.
10. M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe and T. Ohmi: IEEE VLSI Tech. Dig., 1991, p. 45.
11. S. Wolf and R. N. Tauber: Silicon Processing for the VLSI Era, Volume 1: Process Technology (Lattice Press, California, 1986) p. 162.
12. S. Y. Kang, H. J. Lim, C. S. Hwang and H. J. Kim: J. Electrochem. Soc. 149 (2002) C317.
13. C. L. Lin, P. S. Chen and M. C. Chen: J. Electrochem. Soc. 149 (2002) C237.
14. L. J. Li, C. Y. Sheu, B. T. Chen, T. I. Bao, T. L. Lee, R. L. Hwang, S. M. Jang, C. H. Yu and M. S. Liang: Symp. AMC Tech. Dig., 2001, p. 261.
15. S. P. Murarka, I. V. Verner and R. J. Gutmann: Copper-Fundamental Mechanisms for Microelectronic Applications (John Wiley & Sons, New York, 2000) p. 127.
16. S. P. Murarka, I. V. Verner and R. J. Gutmann: Copper-Fundamental Mechanisms for Microelectronic Applications (John Wiley & Sons, New York, 2000) p. 129.