Structure-function relationship between preferred orientation of crystallites and electrical resistivity in thin polycrystalline ZnO:Al films

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 20, 2003, Pages

  Birkholz, M ^a   Selle, B ^b   Fenske, F ^b   Fuhs, W ^b  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ZINC OXIDE;

ANISOTROPY; ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC ACTIVITY; ELECTRIC RESISTANCE; FILM; MICROWAVE OVEN; PREDICTION; X RAY DIFFRACTION;

EID: 11144224438     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.205414     Document Type: Article

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