Mechanism for single-event burnout of bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2634-2639

  Kuboyama, Satoshi ^a   Suzuki, Takahiro ^b   Hirao, Toshio ^c   Matsuda, Sumio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b Nippon Avionics Co Ltd   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; INDUCTANCE MEASUREMENT; PARTICLE BEAM INJECTION; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROSCOPY;

BIPOLAR JUNCTION TRANSISTOR; ENERGETIC PARTICLE INDUCED CHARGE SPECTROSCOPY; SINGLE EVENT BURNOUT;

BIPOLAR TRANSISTORS;

EID: 0034450425     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903819     Document Type: Conference Paper

References (17)

1. Burnout of power MOS transistors with heavy ions of californium-252
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5. Features of the triggering mechanism lot single event burnout of power MOSFETs
6. Mechanism for single-event burnout of power MOSFETs and its characterization technique
7. Single event burnout of power bipolar junction transistors
8. Single-event burnout of epitaxial bipolar transistors
9. Two-dimensional device simulation VENUS-2D/B for amorphous silicon thin-film transistors using a gap-state model
10. Numerical analysis of single event burnout of power MOSFETs
11. Numerical simulation of heavy ion charge generation and collection dynamics
12. Evaluation of SEGR threshold in power MOSFETs
13. The effects of nonphysical carrier velocities in high-gradient single event track simulations
14. Impact of ion energy on single-event upset
15. Current induced avalanche in epitaxial structure
16. Mechanism for single-event burnout of power MOSFETs and its characterization technique