Single-event burnout of epitaxial bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2527-2533

  Kuboyama, S ^a   Sugimoto, K ^b   Shugyo, S ^b   Matsuda, S ^b   Hirao, T ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

BIPOLAR JUNCTION TRANSISTORS (BJT); SINGLE-EVENT BURNOUT (SEB);

BIPOLAR TRANSISTORS;

EID: 0032313950     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736494     Document Type: Article

References (9)

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