Enhanced Avalanche Multiplication Factor and Single-Event Burnout

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 2233-2238

  Kuboyama, Satoshi ^a   Ikeda, Naomi ^a   Hirao, Toshio ^b   Matsuda, Sumio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Avalanche effect; Avalanche multiplication; Bandgap narrowing; Bipolar junction transistor (BJT); Energetic particle induced charge spectroscopy (EPICS); Power MOSFET; Single event burnout (SEB)

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ENERGY GAP; GATES (TRANSISTOR); IMPACT IONIZATION; ITERATIVE METHODS; MOSFET DEVICES; NUCLEAR ENERGY; POISSON EQUATION; SPECTROSCOPY;

AVALANCHE EFFECT; AVALANCHE MULTIPLICATION; BANDGAP NARROWING; BIPOLAR JUNCTION TRANSISTORS (BJT); ENERGETIC PARTICLE INDUCED CHARGE SPECTROSCOPY (EPICS); SINGLE EVENT BURNOUT (SEB);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1242265224     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820730     Document Type: Conference Paper

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